Product overview
- Product number
- 2SK879-GR(TE85L,F)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Catalog
- Transistors - JFETs
- product description
- JFET N-CH 0.1W USM
Documents and media
- Datasheets
- 2SK879-GR(TE85L,F)
Product Details
- Current - Drain (Idss) @ Vds (Vgs=0) :
- 2.6 mA @ 10 V
- Current Drain (Id) - Max :
- -
- Drain to Source Voltage (Vdss) :
- -
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 8.2pF @ 10V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 125°C (TJ)
- Package / Case :
- SC-70, SOT-323
- Part Status :
- Active
- Power - Max :
- 100 mW
- Resistance - RDS(On) :
- -
- Supplier Device Package :
- USM
- Voltage - Breakdown (V(BR)GSS) :
- -
- Voltage - Cutoff (VGS off) @ Id :
- 400 mV @ 100 nA
product description
JFET N-CH 0.1W USM