Product overview
- Product number
- GT50J121(Q)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Catalog
- Transistors - IGBTs - Single
- product description
- IGBT 600V 50A 240W TO3P LH
Documents and media
- Datasheets
- GT50J121(Q)
Product Details
- Current - Collector (Ic) (Max) :
- 50 A
- Current - Collector Pulsed (Icm) :
- 100 A
- Gate Charge :
- -
- IGBT Type :
- -
- Input Type :
- Standard
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-3PL
- Part Status :
- Obsolete
- Power - Max :
- 240 W
- Reverse Recovery Time (trr) :
- -
- Supplier Device Package :
- TO-3P(LH)
- Switching Energy :
- 1.3mJ (on), 1.34mJ (off)
- Td (on/off) @ 25°C :
- 90ns/300ns
- Test Condition :
- 300V, 50A, 13Ohm, 15V
- Vce(on) (Max) @ Vge, Ic :
- 2.45V @ 15V, 50A
- Voltage - Collector Emitter Breakdown (Max) :
- 600 V
product description
IGBT 600V 50A 240W TO3P LH
