Product overview
- Product number
- GT60N321(Q)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Catalog
- Transistors - IGBTs - Single
- product description
- IGBT 1000V 60A 170W TO3P LH
Documents and media
- Datasheets
- GT60N321(Q)
Product Details
- Current - Collector (Ic) (Max) :
- 60 A
- Current - Collector Pulsed (Icm) :
- 120 A
- Gate Charge :
- -
- IGBT Type :
- -
- Input Type :
- Standard
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-3PL
- Part Status :
- Obsolete
- Power - Max :
- 170 W
- Reverse Recovery Time (trr) :
- 2.5 µs
- Supplier Device Package :
- TO-3P(LH)
- Switching Energy :
- -
- Td (on/off) @ 25°C :
- 330ns/700ns
- Test Condition :
- -
- Vce(on) (Max) @ Vge, Ic :
- 2.8V @ 15V, 60A
- Voltage - Collector Emitter Breakdown (Max) :
- 1000 V
product description
IGBT 1000V 60A 170W TO3P LH
