Product overview
- Product number
- GT10J312(Q)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Catalog
- Transistors - IGBTs - Single
- product description
- IGBT 600V 10A 60W TO220SM
Documents and media
- Datasheets
- GT10J312(Q)
Product Details
- Current - Collector (Ic) (Max) :
- 10 A
- Current - Collector Pulsed (Icm) :
- 20 A
- Gate Charge :
- -
- IGBT Type :
- -
- Input Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Part Status :
- Obsolete
- Power - Max :
- 60 W
- Reverse Recovery Time (trr) :
- 200 ns
- Supplier Device Package :
- TO-220SM
- Switching Energy :
- -
- Td (on/off) @ 25°C :
- 400ns/400ns
- Test Condition :
- 300V, 10A, 100Ohm, 15V
- Vce(on) (Max) @ Vge, Ic :
- 2.7V @ 15V, 10A
- Voltage - Collector Emitter Breakdown (Max) :
- 600 V
product description
IGBT 600V 10A 60W TO220SM
