Product overview
- Product number
- 2SK3666-3-TB-E
- Manufacturer
- onsemi
- Catalog
- Transistors - JFETs
- product description
- JFET N-CH 10MA 200MW 3CP
Documents and media
- Datasheets
- 2SK3666-3-TB-E
Product Details
- Current - Drain (Idss) @ Vds (Vgs=0) :
- 1.2 mA @ 10 V
- Current Drain (Id) - Max :
- 10 mA
- Drain to Source Voltage (Vdss) :
- 30 V
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 4pF @ 10V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Part Status :
- Obsolete
- Power - Max :
- 200 mW
- Resistance - RDS(On) :
- 200 Ohms
- Supplier Device Package :
- SMCP
- Voltage - Breakdown (V(BR)GSS) :
- -
- Voltage - Cutoff (VGS off) @ Id :
- 180 mV @ 1 µA
product description
JFET N-CH 10MA 200MW 3CP
Purchases and prices
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