Welcome to visit our website, our working hours are: Monday to Friday 9:00-18:00.

Product overview

Product number
IRG8P50N120KD-EPBF
Manufacturer
Rochester Electronics
Catalog
Transistors - IGBTs - Single
product description
IRG8P50N120 - DISCRETE IGBT WITH

Documents and media

Product Details

Current - Collector (Ic) (Max) :
80 A
Current - Collector Pulsed (Icm) :
105 A
Gate Charge :
315 nC
IGBT Type :
-
Input Type :
Standard
Mounting Type :
Through Hole
Operating Temperature :
-40°C ~ 150°C (TJ)
Package / Case :
TO-247-3
Part Status :
Obsolete
Power - Max :
350 W
Reverse Recovery Time (trr) :
170 ns
Supplier Device Package :
TO-247AD
Switching Energy :
2.3mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C :
35ns/190ns
Test Condition :
600V, 35A, 5Ohm, 15V
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 35A
Voltage - Collector Emitter Breakdown (Max) :
1200 V

product description

IRG8P50N120 - DISCRETE IGBT WITH

Purchases and prices

Recommended Products