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Product overview

Product number
GT20N135SRA,S1E
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Catalog
Transistors - IGBTs - Single
product description
D-IGBT TO-247 VCES=1350V IC=40A

Documents and media

Datasheets
GT20N135SRA,S1E

Product Details

Current - Collector (Ic) (Max) :
40 A
Current - Collector Pulsed (Icm) :
80 A
Gate Charge :
185 nC
IGBT Type :
-
Input Type :
Standard
Mounting Type :
Through Hole
Operating Temperature :
175°C (TJ)
Package / Case :
TO-247-3
Part Status :
Active
Power - Max :
312 W
Reverse Recovery Time (trr) :
-
Supplier Device Package :
TO-247
Switching Energy :
-, 700µJ (off)
Td (on/off) @ 25°C :
-
Test Condition :
300V, 40A, 39Ohm, 15V
Vce(on) (Max) @ Vge, Ic :
2.4V @ 15V, 40A
Voltage - Collector Emitter Breakdown (Max) :
1350 V

product description

D-IGBT TO-247 VCES=1350V IC=40A

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