Product overview
- Product number
- GT20N135SRA,S1E
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Catalog
- Transistors - IGBTs - Single
- product description
- D-IGBT TO-247 VCES=1350V IC=40A
Documents and media
- Datasheets
- GT20N135SRA,S1E
Product Details
- Current - Collector (Ic) (Max) :
- 40 A
- Current - Collector Pulsed (Icm) :
- 80 A
- Gate Charge :
- 185 nC
- IGBT Type :
- -
- Input Type :
- Standard
- Mounting Type :
- Through Hole
- Operating Temperature :
- 175°C (TJ)
- Package / Case :
- TO-247-3
- Part Status :
- Active
- Power - Max :
- 312 W
- Reverse Recovery Time (trr) :
- -
- Supplier Device Package :
- TO-247
- Switching Energy :
- -, 700µJ (off)
- Td (on/off) @ 25°C :
- -
- Test Condition :
- 300V, 40A, 39Ohm, 15V
- Vce(on) (Max) @ Vge, Ic :
- 2.4V @ 15V, 40A
- Voltage - Collector Emitter Breakdown (Max) :
- 1350 V
product description
D-IGBT TO-247 VCES=1350V IC=40A
Purchases and prices
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