Product overview
- Product number
- IRGP6650D-EPBF
- Manufacturer
- Rochester Electronics
- Catalog
- Transistors - IGBTs - Single
- product description
- IGBT WITH RECOVERY DIODE
Documents and media
- Datasheets
- IRGP6650D-EPBF
Product Details
- Current - Collector (Ic) (Max) :
- 80 A
- Current - Collector Pulsed (Icm) :
- 105 A
- Gate Charge :
- 75 nC
- IGBT Type :
- -
- Input Type :
- Standard
- Mounting Type :
- Through Hole
- Operating Temperature :
- -40°C ~ 175°C (TJ)
- Package / Case :
- TO-247-3
- Part Status :
- Obsolete
- Power - Max :
- 306 W
- Reverse Recovery Time (trr) :
- 50 ns
- Supplier Device Package :
- TO-247AD
- Switching Energy :
- 300µJ (on), 630µJ (off)
- Td (on/off) @ 25°C :
- 40ns/105ns
- Test Condition :
- 400V, 35A, 10Ohm, 15V
- Vce(on) (Max) @ Vge, Ic :
- 1.95V @ 15V, 35A
- Voltage - Collector Emitter Breakdown (Max) :
- 600 V
product description
IGBT WITH RECOVERY DIODE
