Product overview
- Product number
- DF80R12W2H3FB11BPSA1
- Manufacturer
- Infineon Technologies
- Catalog
- Transistors - IGBTs - Modules
- product description
- IGBT MOD 1200V 20A 20MW
Documents and media
- Datasheets
- DF80R12W2H3FB11BPSA1
Product Details
- Configuration :
- Half Bridge
- Current - Collector (Ic) (Max) :
- 20 A
- Current - Collector Cutoff (Max) :
- 1 mA
- IGBT Type :
- Trench Field Stop
- Input :
- Standard
- Input Capacitance (Cies) @ Vce :
- 2.35 nF @ 25 V
- Mounting Type :
- Chassis Mount
- NTC Thermistor :
- Yes
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- Module
- Part Status :
- Active
- Power - Max :
- 20 mW
- Supplier Device Package :
- Module
- Vce(on) (Max) @ Vge, Ic :
- 1.7V @ 15V, 20A
- Voltage - Collector Emitter Breakdown (Max) :
- 1200 V
product description
IGBT MOD 1200V 20A 20MW
Purchases and prices
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