Datasheets

SQ3442EV-T1-GE3

Current - Continuous Drain (Id) @ 25°C :

4.3A (Tc)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

5.5 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

405 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Part Status :

Obsolete

Power Dissipation (Max) :

-

Rds On (Max) @ Id, Vgs :

55mOhm @ 4A, 4.5V

Supplier Device Package :

6-TSOP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

1.6V @ 250µA