Product overview
Documents and media
- Datasheets
- SQ3419EEV-T1-GE3
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 7.4A (Tc)
- Drain to Source Voltage (Vdss) :
- 40 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 15 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1065 pF @ 20 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Part Status :
- Obsolete
- Power Dissipation (Max) :
- 5W (Tc)
- Rds On (Max) @ Id, Vgs :
- 50mOhm @ 2.5A, 10V
- Supplier Device Package :
- 6-TSOP
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±12V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250µA
product description
MOSFET P-CH 40V 7.4A 6TSOP