Datasheets

R5021ANJTL

Current - Continuous Drain (Id) @ 25°C :

21A (Tc)

Drain to Source Voltage (Vdss) :

500 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

64 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

2300 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Part Status :

Active

Power Dissipation (Max) :

100W (Tc)

Rds On (Max) @ Id, Vgs :

220mOhm @ 10.5A, 10V

Supplier Device Package :

LPTS

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

4.5V @ 1mA