Datasheets

NTHS4111PT1G

Current - Continuous Drain (Id) @ 25°C :

3.3A (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

28 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1500 pF @ 24 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-SMD, Flat Lead

Part Status :

Obsolete

Power Dissipation (Max) :

700mW (Ta)

Rds On (Max) @ Id, Vgs :

45mOhm @ 4.4A, 10V

Supplier Device Package :

ChipFET™

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA