Datasheets

IGLD60R190D1SAUMA1

Current - Continuous Drain (Id) @ 25°C :

10A (Tc)

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

157 pF @ 400 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-LDFN Exposed Pad

Part Status :

Active

Power Dissipation (Max) :

62.5W (Tc)

Rds On (Max) @ Id, Vgs :

-

Supplier Device Package :

PG-LSON-8-1

Technology :

GaNFET (Gallium Nitride)

Vgs (Max) :

-10V

Vgs(th) (Max) @ Id :

1.6V @ 960µA