Datasheets

R8003KND3TL1

Current - Continuous Drain (Id) @ 25°C :

3A (Ta)

Drain to Source Voltage (Vdss) :

800 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

11.5 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

300 pF @ 100 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Part Status :

Active

Power Dissipation (Max) :

45W (Ta)

Rds On (Max) @ Id, Vgs :

-

Supplier Device Package :

SST3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4.5V @ 2mA