Datasheets

TK10J80E,S1E

Current - Continuous Drain (Id) @ 25°C :

10A (Ta)

Drain to Source Voltage (Vdss) :

800 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

46 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

2000 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-3P-3, SC-65-3

Part Status :

Active

Power Dissipation (Max) :

250W (Tc)

Rds On (Max) @ Id, Vgs :

1Ohm @ 5A, 10V

Supplier Device Package :

TO-3P(N)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 1mA