Product overview
- Product number
- R6002ENHTB1
- Manufacturer
- ROHM Semiconductor
- product description
- 600V 1.7A SOP8, LOW-NOISE POWER
Documents and media
- Datasheets
- R6002ENHTB1
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 1.7A (Ta)
- Drain to Source Voltage (Vdss) :
- 600 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 6.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 65 pF @ 25 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Part Status :
- Active
- Power Dissipation (Max) :
- 2W (Ta)
- Rds On (Max) @ Id, Vgs :
- 3.4Ohm @ 500mA, 10V
- Supplier Device Package :
- 8-SOP
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
product description
600V 1.7A SOP8, LOW-NOISE POWER
Purchases and prices
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