Product overview
Documents and media
- Datasheets
- SQ3460EV-T1_GE3
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 8A (Tc)
- Drain to Source Voltage (Vdss) :
- 20 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 1.8V, 4.5V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 14 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1060 pF @ 10 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Part Status :
- Active
- Power Dissipation (Max) :
- 3.6W (Tc)
- Rds On (Max) @ Id, Vgs :
- 30mOhm @ 5.1A, 4.5V
- Supplier Device Package :
- 6-TSOP
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±8V
- Vgs(th) (Max) @ Id :
- 1V @ 250µA
product description
MOSFET N-CH 20V 8A 6TSOP