Datasheets

IQE065N10NM5CGATMA1

Current - Continuous Drain (Id) @ 25°C :

14A (Ta), 85A (Tc)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

42 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

3000 pF @ 50 V

Mounting Type :

Surface Mount, Wettable Flank

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

8-PowerTDFN

Part Status :

Active

Power Dissipation (Max) :

2.5W (Ta), 100W (Tc)

Rds On (Max) @ Id, Vgs :

6.5mOhm @ 20A, 10V

Supplier Device Package :

PG-TTFN-9-1

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.8V @ 48µA