Product overview
- Product number
- IQE030N06NM5CGATMA1
- Manufacturer
- Infineon Technologies
- product description
- TRENCH 40<-<100V PG-TTFN-9
Documents and media
- Datasheets
- IQE030N06NM5CGATMA1
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 21A (Ta), 137A (Tc)
- Drain to Source Voltage (Vdss) :
- 60 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 6V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 49 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3800 pF @ 30 V
- Mounting Type :
- Surface Mount, Wettable Flank
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- 8-PowerTDFN
- Part Status :
- Active
- Power Dissipation (Max) :
- 2.5W (Ta), 107W (Tc)
- Rds On (Max) @ Id, Vgs :
- 3mOhm @ 20A, 10V
- Supplier Device Package :
- PG-TTFN-9-1
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3.3V @ 50µA
product description
TRENCH 40<-<100V PG-TTFN-9