Datasheets

RQ1E100XNTR

Current - Continuous Drain (Id) @ 25°C :

10A (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

12.7 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds :

1000 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-SMD, Flat Lead

Part Status :

Active

Power Dissipation (Max) :

550mW (Ta)

Rds On (Max) @ Id, Vgs :

10.5mOhm @ 10A, 10V

Supplier Device Package :

TSMT8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 1mA