Datasheets

SQ3418AEEV-T1_GE3

Current - Continuous Drain (Id) @ 25°C :

8A

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

3.5 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

528 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Part Status :

Active

Power Dissipation (Max) :

5W (Tc)

Rds On (Max) @ Id, Vgs :

35mOhm @ 6A, 10V

Supplier Device Package :

6-TSOP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250µA