Datasheets

RM50P30D3

Current - Continuous Drain (Id) @ 25°C :

50A (Tc)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

3448 pF @ 15 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerVDFN

Part Status :

Active

Power Dissipation (Max) :

38W (Tc)

Rds On (Max) @ Id, Vgs :

8.7mOhm @ 30A, 10V

Supplier Device Package :

8-DFN-EP (3x3)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250µA