Product overview
- Product number
- RQ3E080GNTB
- Manufacturer
- ROHM Semiconductor
- product description
- MOSFET N-CH 30V 8A 8HSMT
Documents and media
- Datasheets
- RQ3E080GNTB
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 8A (Ta)
- Drain to Source Voltage (Vdss) :
- 30 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 5.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 295 pF @ 15 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- 8-PowerVDFN
- Part Status :
- Active
- Power Dissipation (Max) :
- 2W (Ta), 15W (Tc)
- Rds On (Max) @ Id, Vgs :
- 16.7mOhm @ 8A, 10V
- Supplier Device Package :
- 8-HSMT (3.2x3)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
product description
MOSFET N-CH 30V 8A 8HSMT
