Datasheets

AO3160E

Current - Continuous Drain (Id) @ 25°C :

40mA (Ta)

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

0.9 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

9.5 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Part Status :

Active

Power Dissipation (Max) :

1.39W (Ta)

Rds On (Max) @ Id, Vgs :

500Ohm @ 16mA, 10V

Supplier Device Package :

SOT-23A-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.2V @ 8µA