Datasheets

SQJ211ELP-T1_GE3

Current - Continuous Drain (Id) @ 25°C :

33.6A (Tc)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

68 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

3800 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

PowerPAK® SO-8

Part Status :

Active

Power Dissipation (Max) :

68W (Tc)

Rds On (Max) @ Id, Vgs :

30mOhm @ 8A, 10V

Supplier Device Package :

PowerPAK® SO-8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250µA