Datasheets

SQ3425EV-T1_GE3

Current - Continuous Drain (Id) @ 25°C :

7.4A (Tc)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

10.3 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

840 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Part Status :

Active

Power Dissipation (Max) :

5W (Tc)

Rds On (Max) @ Id, Vgs :

60mOhm @ 4.7A, 4.5V

Supplier Device Package :

6-TSOP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

1.4V @ 250µA