Datasheets

STU5N60M2

Current - Continuous Drain (Id) @ 25°C :

3.7A (Tc)

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

4.5 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

165 pF @ 100 V

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-251-3, IPak, Short Leads

Part Status :

Active

Power Dissipation (Max) :

45W (Tc)

Rds On (Max) @ Id, Vgs :

1.4Ohm @ 1.85A, 10V

Supplier Device Package :

I-PAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±25V

Vgs(th) (Max) @ Id :

4V @ 250µA