Datasheets

SI3483DDV-T1-GE3

Current - Continuous Drain (Id) @ 25°C :

6.4A (Ta), 8A (Tc)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

14.5 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

580 pF @ 15 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Part Status :

Active

Power Dissipation (Max) :

2W (Ta), 3W (Tc)

Rds On (Max) @ Id, Vgs :

31.2mOhm @ 5A, 10V

Supplier Device Package :

6-TSOP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

+16V, -20V

Vgs(th) (Max) @ Id :

2.2V @ 250µA