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Product overview

Product number
TK040N65Z,S1F
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Catalog
Transistors - FETs, MOSFETs - Single
product description
MOSFET N-CH 650V 57A TO247

Documents and media

Datasheets
TK040N65Z,S1F

Product Details

Current - Continuous Drain (Id) @ 25°C :
57A (Ta)
Drain to Source Voltage (Vdss) :
650 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
6250 pF @ 300 V
Mounting Type :
Through Hole
Operating Temperature :
150°C
Package / Case :
TO-247-3
Part Status :
Active
Power Dissipation (Max) :
360W (Tc)
Rds On (Max) @ Id, Vgs :
40mOhm @ 28.5A, 10V
Supplier Device Package :
TO-247
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
4V @ 2.85mA

product description

MOSFET N-CH 650V 57A TO247

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