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Product overview

Product number
RQ3P300BHTB1
Manufacturer
ROHM Semiconductor
Catalog
Transistors - FETs, MOSFETs - Single
product description
NCH 100V 39A, HSMT8, POWER MOSFE

Documents and media

Datasheets
RQ3P300BHTB1

Product Details

Current - Continuous Drain (Id) @ 25°C :
39A (Ta)
Drain to Source Voltage (Vdss) :
100 V
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
2040 pF @ 50 V
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
8-PowerVDFN
Part Status :
Active
Power Dissipation (Max) :
2W (Ta)
Rds On (Max) @ Id, Vgs :
15.5mOhm @ 10A, 10V
Supplier Device Package :
8-HSMT (3.2x3)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 1mA

product description

NCH 100V 39A, HSMT8, POWER MOSFE

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