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Product overview

Product number
RQ6C050BCTCR
Manufacturer
ROHM Semiconductor
Catalog
Transistors - FETs, MOSFETs - Single
product description
MOSFET P-CH 20V 5A TSMT6

Documents and media

Datasheets
RQ6C050BCTCR

Product Details

Current - Continuous Drain (Id) @ 25°C :
5A (Tc)
Drain to Source Voltage (Vdss) :
20 V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V
FET Feature :
-
FET Type :
P-Channel
Gate Charge (Qg) (Max) @ Vgs :
10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds :
740 pF @ 10 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Part Status :
Active
Power Dissipation (Max) :
1.25W (Tc)
Rds On (Max) @ Id, Vgs :
36mOhm @ 5A, 4.5V
Supplier Device Package :
TSMT6 (SC-95)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±8V
Vgs(th) (Max) @ Id :
1.2V @ 1mA

product description

MOSFET P-CH 20V 5A TSMT6

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