Product overview
- Product number
- R6006KNXC7G
- Manufacturer
- ROHM Semiconductor
- product description
- 600V 6A TO-220FM, HIGH-SPEED SWI
Documents and media
- Datasheets
- R6006KNXC7G
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 6A (Ta)
- Drain to Source Voltage (Vdss) :
- 600 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 12 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 350 pF @ 25 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-220-3 Full Pack
- Part Status :
- Active
- Power Dissipation (Max) :
- 40W (Tc)
- Rds On (Max) @ Id, Vgs :
- 830mOhm @ 3A, 10V
- Supplier Device Package :
- TO-220FM
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 5.5V @ 1mA
product description
600V 6A TO-220FM, HIGH-SPEED SWI
