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Product overview

Product number
TK155U65Z,RQ
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Catalog
Transistors - FETs, MOSFETs - Single
product description
DTMOS VI TOLL PD=150W F=1MHZ

Documents and media

Datasheets
TK155U65Z,RQ

Product Details

Current - Continuous Drain (Id) @ 25°C :
18A (Ta)
Drain to Source Voltage (Vdss) :
650 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
1635 pF @ 300 V
Mounting Type :
Surface Mount
Operating Temperature :
150°C
Package / Case :
8-PowerSFN
Part Status :
Active
Power Dissipation (Max) :
150W (Tc)
Rds On (Max) @ Id, Vgs :
155mOhm @ 9A, 10V
Supplier Device Package :
TOLL
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
4V @ 730µA

product description

DTMOS VI TOLL PD=150W F=1MHZ

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