Welcome to visit our website, our working hours are: Monday to Friday 9:00-18:00.

Product overview

Product number
3N164 DIE
Manufacturer
Linear Integrated Systems, Inc.
Catalog
Transistors - FETs, MOSFETs - Single
product description
P-CHANNEL, SINGLE ENHANCEMENT MO

Documents and media

Datasheets
3N164 DIE

Product Details

Current - Continuous Drain (Id) @ 25°C :
50mA
Drain to Source Voltage (Vdss) :
30 V
Drive Voltage (Max Rds On, Min Rds On) :
20V
FET Feature :
-
FET Type :
P-Channel
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
3500 pF @ 15 V
Mounting Type :
Surface Mount
Operating Temperature :
-
Package / Case :
Die
Part Status :
Active
Power Dissipation (Max) :
-
Rds On (Max) @ Id, Vgs :
300Ohm @ 100µA, 20V
Supplier Device Package :
Die
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
-6.5V
Vgs(th) (Max) @ Id :
5V @ 10µA

product description

P-CHANNEL, SINGLE ENHANCEMENT MO

Purchases and prices

Recommended Products