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Product overview

Product number
HUF76132S3ST
Manufacturer
Rochester Electronics
Catalog
Transistors - FETs, MOSFETs - Single
product description
N-CHANNEL POWER MOSFET

Documents and media

Datasheets
HUF76132S3ST

Product Details

Current - Continuous Drain (Id) @ 25°C :
75A (Tc)
Drain to Source Voltage (Vdss) :
30 V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
1650 pF @ 25 V
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 150°C (TJ)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Part Status :
Active
Power Dissipation (Max) :
120W (Tc)
Rds On (Max) @ Id, Vgs :
11mOhm @ 75A, 10V
Supplier Device Package :
TO-263AB
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
3V @ 250µA

product description

N-CHANNEL POWER MOSFET

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