Datasheets

TP0610K-T1-GE3

Current - Continuous Drain (Id) @ 25°C :

185mA (Ta)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

1.7 nC @ 15 V

Input Capacitance (Ciss) (Max) @ Vds :

23 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Part Status :

Active

Power Dissipation (Max) :

350mW (Ta)

Rds On (Max) @ Id, Vgs :

6Ohm @ 500mA, 10V

Supplier Device Package :

SOT-23-3 (TO-236)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA