Product overview
- Product number
- TK17V65W,LQ
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- product description
- X35 PB-F POWER MOSFET TRANSISTOR
Documents and media
- Datasheets
- TK17V65W,LQ
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 17.3A (Ta)
- Drain to Source Voltage (Vdss) :
- 650 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 45 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1800 pF @ 300 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C
- Package / Case :
- 4-VSFN Exposed Pad
- Part Status :
- Active
- Power Dissipation (Max) :
- 156W (Tc)
- Rds On (Max) @ Id, Vgs :
- 210mOhm @ 8.7A, 10V
- Supplier Device Package :
- 4-DFN-EP (8x8)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 3.5V @ 900µA
product description
X35 PB-F POWER MOSFET TRANSISTOR