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Product overview

Product number
NTMFD0D9N02P1E
Manufacturer
Flip Electronics
Catalog
Transistors - FETs, MOSFETs - Arrays
product description
IFET 25V 0.9 MOHM PQFN56MP

Documents and media

Datasheets
NTMFD0D9N02P1E

Product Details

Current - Continuous Drain (Id) @ 25°C :
14A (Ta), 30A (Ta)
Drain to Source Voltage (Vdss) :
30V, 25V
FET Feature :
Standard
FET Type :
2 N-Channel (Dual) Asymmetrical
Gate Charge (Qg) (Max) @ Vgs :
9nC @ 4.5V, 30nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
1400pF @ 15V, 5050pF @ 13V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-PowerWDFN
Part Status :
Active
Power - Max :
960mW (Ta), 1.04W (Ta)
Rds On (Max) @ Id, Vgs :
3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V
Supplier Device Package :
8-PQFN (5x6)
Vgs(th) (Max) @ Id :
2V @ 340µA, 2V @ 1mA

product description

IFET 25V 0.9 MOHM PQFN56MP

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