Product overview
- Product number
- PMDPB42UN,115
- Manufacturer
- NXP Semiconductors
- product description
- MOSFET 2N-CH 20V 3.9A HUSON6
Documents and media
- Datasheets
- PMDPB42UN,115
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 3.9A
- Drain to Source Voltage (Vdss) :
- 20V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 3.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 185pF @ 10V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 6-UDFN Exposed Pad
- Part Status :
- Obsolete
- Power - Max :
- 510mW
- Rds On (Max) @ Id, Vgs :
- 50mOhm @ 3.9A, 4.5V
- Supplier Device Package :
- 6-HUSON (2x2)
- Vgs(th) (Max) @ Id :
- 1V @ 250µA
product description
MOSFET 2N-CH 20V 3.9A HUSON6