Product overview
- Product number
- SI7940DP-T1-E3
- Manufacturer
- Vishay
- product description
- MOSFET 2N-CH 12V 7.6A PPAK SO-8
Documents and media
- Datasheets
- SI7940DP-T1-E3
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 7.6A
- Drain to Source Voltage (Vdss) :
- 12V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- PowerPAK® SO-8 Dual
- Part Status :
- Obsolete
- Power - Max :
- 1.4W
- Rds On (Max) @ Id, Vgs :
- 17mOhm @ 11.8A, 4.5V
- Supplier Device Package :
- PowerPAK® SO-8 Dual
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
product description
MOSFET 2N-CH 12V 7.6A PPAK SO-8
Purchases and prices
Recommended Products
You may be looking for
D38999/26MJ19PA
O 26,0-JO22H-E-3,3-1-T1-LF
MS27499E14T37PB
SIT1602BC-31-28E-3.570000
924217-28-22-I
310-87-104-41-205191
1969813-1
MS27499E14Z37S
0009482060
2-146496-9
54122-808081250LF
SG3100E-10SL-54P
SIT8208AI-G2-33S-48.000000T
10131935-906ULF
353VB5I270R
59202-T38-25-150LF
PT01E-10-6S(300)
O 32,0-JO22H-E-1,8-1-T1-LF
MS27499E14T37PC
SIT1602BC-31-30S-35.840000
