Product overview
Documents and media
- Datasheets
- SI7909DN-T1-GE3
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 5.3A
- Drain to Source Voltage (Vdss) :
- 12V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 P-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- PowerPAK® 1212-8 Dual
- Part Status :
- Obsolete
- Power - Max :
- 1.3W
- Rds On (Max) @ Id, Vgs :
- 37mOhm @ 7.7A, 4.5V
- Supplier Device Package :
- PowerPAK® 1212-8 Dual
- Vgs(th) (Max) @ Id :
- 1V @ 700µA
product description
MOSFET 2P-CH 12V 5.3A 1212-8
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