Product overview
Documents and media
- Datasheets
- SI6562DQ-T1-GE3
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- -
- Drain to Source Voltage (Vdss) :
- 20V
- FET Feature :
- Logic Level Gate
- FET Type :
- N and P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -
- Part Status :
- Obsolete
- Power - Max :
- 1W
- Rds On (Max) @ Id, Vgs :
- 30mOhm @ 4.5A, 4.5V
- Supplier Device Package :
- 8-TSSOP
- Vgs(th) (Max) @ Id :
- 600mV @ 250µA (Min)
product description
MOSFET N/P-CH 20V 8-TSSOP