Product overview
- Product number
- TPC8211(TE12L,Q,M)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- product description
- MOSFET 2N-CH 30V 5.5A SOP8
Documents and media
- Datasheets
- TPC8211(TE12L,Q,M)
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A
- Drain to Source Voltage (Vdss) :
- 30V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1250pF @ 10V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Part Status :
- Obsolete
- Power - Max :
- 450mW
- Rds On (Max) @ Id, Vgs :
- 36mOhm @ 3A, 10V
- Supplier Device Package :
- 8-SOP (5.5x6.0)
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
product description
MOSFET 2N-CH 30V 5.5A SOP8
