Product overview
- Product number
- HAT2210RWS-E
- Manufacturer
- Renesas Electronics Corporation
- product description
- MOSFET N-PAK 8SOP
Documents and media
- Datasheets
- HAT2210RWS-E
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 7.5A (Ta), 8A (Ta)
- Drain to Source Voltage (Vdss) :
- 30V
- FET Feature :
- Logic Level Gate, 4.5V Drive
- FET Type :
- 2 N-Channel (Dual), Schottky
- Gate Charge (Qg) (Max) @ Vgs :
- 4.6nC @ 4.5V, 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 630pF @ 10V, 1330pF @ 10V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C
- Part Status :
- Obsolete
- Power - Max :
- 1.5W (Ta)
- Rds On (Max) @ Id, Vgs :
- 24mOhm @ 3.75A, 10V, 22mOhm @ 4A, 10V
- Supplier Device Package :
- 8-SOP
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
product description
MOSFET N-PAK 8SOP
