Product overview
- Product number
- QJD1210011
- Manufacturer
- Powerex, Inc.
- product description
- MOSFET 2N-CH 1200V 100A SIC
Documents and media
- Datasheets
- QJD1210011
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 100A (Tc)
- Drain to Source Voltage (Vdss) :
- 1200V (1.2kV)
- FET Feature :
- Silicon Carbide (SiC)
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 500nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 10200pF @ 800V
- Mounting Type :
- Chassis Mount
- Operating Temperature :
- -40°C ~ 175°C (TJ)
- Package / Case :
- Module
- Part Status :
- Active
- Power - Max :
- 900W
- Rds On (Max) @ Id, Vgs :
- 25mOhm @ 100A, 20V
- Supplier Device Package :
- Module
- Vgs(th) (Max) @ Id :
- 5V @ 10mA
product description
MOSFET 2N-CH 1200V 100A SIC
