Product overview
Documents and media
- Datasheets
- SI4920DY-T1-GE3
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- -
- Drain to Source Voltage (Vdss) :
- 30V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Part Status :
- Obsolete
- Power - Max :
- 2W
- Rds On (Max) @ Id, Vgs :
- 25mOhm @ 6.9A, 10V
- Supplier Device Package :
- 8-SOIC
- Vgs(th) (Max) @ Id :
- 1V @ 250µA (Min)
product description
MOSFET 2N-CH 30V 8-SOIC
