Product overview
- Product number
- IPG20N06S2L50ATMA1
- Manufacturer
- Infineon Technologies
- product description
- MOSFET 2N-CH 55V 20A 8TDSON
Documents and media
- Datasheets
- IPG20N06S2L50ATMA1
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 20A
- Drain to Source Voltage (Vdss) :
- 55V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 560pF @ 25V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- 8-PowerVDFN
- Part Status :
- Active
- Power - Max :
- 51W
- Rds On (Max) @ Id, Vgs :
- 50mOhm @ 15A, 10V
- Supplier Device Package :
- PG-TDSON-8-4
- Vgs(th) (Max) @ Id :
- 2V @ 19µA
product description
MOSFET 2N-CH 55V 20A 8TDSON