Product overview
- Product number
- DMN2016LHAB-7
- Manufacturer
- Diodes Incorporated
- product description
- MOSFET 2N-CH 20V 7.5A 6UDFN
Documents and media
- Datasheets
- DMN2016LHAB-7
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 7.5A
- Drain to Source Voltage (Vdss) :
- 20V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual) Common Drain
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1550pF @ 10V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 6-UDFN Exposed Pad
- Part Status :
- Active
- Power - Max :
- 1.2W
- Rds On (Max) @ Id, Vgs :
- 15.5mOhm @ 4A, 4.5V
- Supplier Device Package :
- U-DFN2030-6 (Type B)
- Vgs(th) (Max) @ Id :
- 1.1V @ 250µA
product description
MOSFET 2N-CH 20V 7.5A 6UDFN
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