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Product overview

Product number
MSCSM120DUM027AG
Manufacturer
Microchip Technology
Catalog
Transistors - FETs, MOSFETs - Arrays
product description
PM-MOSFET-SIC-SP6C

Documents and media

Datasheets
MSCSM120DUM027AG

Product Details

Current - Continuous Drain (Id) @ 25°C :
733A (Tc)
Drain to Source Voltage (Vdss) :
1200V (1.2kV)
FET Feature :
Silicon Carbide (SiC)
FET Type :
2 N-Channel (Dual) Common Source
Gate Charge (Qg) (Max) @ Vgs :
2088nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds :
27000pF @ 1000V
Mounting Type :
Chassis Mount
Operating Temperature :
-40°C ~ 175°C (TJ)
Package / Case :
Module
Part Status :
Active
Power - Max :
2968W (Tc)
Rds On (Max) @ Id, Vgs :
3.5mOhm @ 360A, 20V
Supplier Device Package :
-
Vgs(th) (Max) @ Id :
2.8V @ 9mA

product description

PM-MOSFET-SIC-SP6C

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